View NLAS32506_761494.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NLAS325 Dual SPST Analog Switch, Low Voltage, Single Supply
The NLAS325 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the Ultra-Small 8 package. The use of advanced 0.6 m CMOS process, improves the RON resistance considerably compared to older higher voltage technologies.
Features http://onsemi.com
MARKING DIAGRAM
8 8 1 US8 US SUFFIX CASE 493 A9 M G A9 M G G
* * * * * * * * * * *
On Resistance is 20 W Typical at 5.0 V Matching is < 1.0 W Between Sections 2.0-6.0 V Operating Range Ultra Low < 5.0 pC Charge Injection Ultra Low Leakage < 1.0 nA at 5.0 V, 25C Wide Bandwidth > 200 MHz, -3.0 dB 2000 V ESD (HBM) RON Flatness "6.0 W at 5.0 V US8 Package Independent Enables; One Positive, One Negative Pb-Free Package is Available
1 = Device Code = Date Code* = Pb-Free Package
(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
PIN ASSIGNMENT
1 2 3 NO1 COM1 IN2 GND NC2 COM2 IN1 VCC
NO1
1
8
VCC
4 5
COM1
2
7
IN1
6 7 8
IN2
3
6
COM2
FUNCTION TABLE
GND 4 5 NC2 On/Off Enable Input L H Analog Switch 1 Off On Analog Switch 2 On Off
Figure 1. Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2006
1
April, 2006 - Rev. 6
Publication Order Number: NLAS325/D
NLAS325
MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO ICC IGND TSTG TL TJ qJA PD MSL FR VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Lead Temperature, 1.0 mm from Case for 10 Seconds Junction Temperature under Bias Thermal Resistance (Note 1) Power Dissipation in Still Air at 85C Moisture Sensitivity Flammability Rating ESD Withstand Voltage Oxygen Index: 28 to 34 Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) VI < GND VO < GND Parameter Value *0.5 to )7.0 *0.5 to )7.0 *0.5 to )7.0 *50 *50 $50 $100 $100 *65 to )150 260 )150 250 250 Level 1 UL 94 V-0 @ 0.125 in > 2000 > 200 N/A V Unit V V V mA mA mA mA mA C C C C/W mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 2-ounce copper trace with no air flow. 2. Tested to EIA/JESD22-A114-A. 3. Tested to EIA/JESD22-A115-A. 4. Tested to JESD22-C101-A.
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V Parameter Min 2.0 GND GND *55 0 0 Max 5.5 5.5 VCC )125 100 20 Unit V V V C ns/V
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES
Junction Temperature C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130C TJ = 120C TJ = 100C TJ = 110C TJ = 90C TJ = 80C 100 TIME, YEARS
1 1 10 1000
Figure 2. Failure Rate vs. Time Junction Temperature
http://onsemi.com
2
NLAS325
DC CHARACTERISTICS - Digital Section (Voltages Referenced to GND)
Guaranteed Limit Symbol VIH Parameter Minimum High-Level Input Voltage, Select Inputs Condition VCC 2.0 2.5 3.0 4.5 5.5 2.0 2.5 3.0 4.5 5.5 VIN = 5.5 V or GND Select and VIS = VCC or GND 0 V to 5.5 V 5.5 *555C to 255C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $0.2 4.0 t855C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 4.0 t1255C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 8.0 Unit V
VIL
Maximum Low-Level Input Voltage, Select Inputs
V
IIN ICC
Maximum Input Leakage Current, Select Inputs Maximum Quiescent Supply Current
mA mA
DC ELECTRICAL CHARACTERISTICS - Analog Section
Guaranteed Limit Symbol RON Parameter Maximum "ON" Resistance (Figures 16 - 22) Condition VIN = VIL or VIH VIS = GND to VCC IINI v 10 mA VIN = VIL or VIH IINI v 10 mA VIS = 1.0 V, 2.0 V, 3.5 V VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V VCC 2.5 3.0 4.5 5.5 4.5 *555C to 255C 85 45 30 25 4.0 t855C 95 50 35 30 4.0 t1255C 105 55 40 35 5.0 Unit W
RFLAT(ON)
ON Resistance Flatness (Figures 16 - 22)
W
INC(OFF) INO(OFF) ICOM(ON)
NO or NC Off Leakage Current (Figure 8) COM ON Leakage Current (Figure 8)
5.5 5.5
1.0 1.0
10 10
100 100
nA nA
http://onsemi.com
3
NLAS325
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit VCC Symbol tON Parameter Turn-On Time (Figures 11 and 12) Test Conditions RL = 300 W, CL = 35 pF (Figures 4 and 5) (V) 2.5 3.0 4.5 5.5 2.5 3.0 4.5 5.5 2.5 3.0 4.5 5.5 VIS (V) 2.0 2.0 3.0 3.0 2.0 2.0 3.0 3.0 2.0 2.0 3.0 3.0 *555C to 255C Min 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Typ* 23 16 11 9.0 7.0 5.0 4.0 3.0 12 11 6.0 5.0 Max 35 24 16 14 12 10 6.0 5.0 t855C Min 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max 38 27 19 17 15 13 9.0 8.0 t1255C Min 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max 41 30 22 20 18 16 12 11 Unit ns
tOFF
Turn-Off Time (Figures 11 and 12)
RL = 300 W, CL = 35 pF (Figures 4 and 5)
ns
tBBM
Minimum Break-Before-Make Time
VIS = 3.0 V (Figure 3) RL = 300 W, CL = 35 pF
ns
*Typical Characteristics are at 25C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8.0 10 10 20 pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
VCC Symbol BW Parameter Maximum On-Channel -3.0 dB Bandwidth or Minimum Frequency Response (Figure 10) Maximum Feedthrough On Loss Condition VIN = 0 dBm VIN centered between VCC and GND (Figure 6) VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 6) f = 100 kHz; VIS = 1.0 V RMS VIN centered between VCC and GND (Figure 6) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3.0 ns RIS = 0 W, CL = 1000 pF Q = CL * DVOUT (Figure 7) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W, CL = 50 pF VIS = 5.0 VPP sine wave f = 100 kHz; VIS = 1.0 V RMS VIN centered between VCC and GND (Figure 6) (V) 3.0 4.5 5.5 3.0 4.5 5.5 3.0 4.5 5.5 3.0 5.5 Typical 25C 145 170 175 *2.0 *2.0 *2.0 *93 *93 *93 1.5 3.0 Unit MHz
VONL
dB
VISO
Off-Channel Isolation (Figure 9)
dB
Q
Charge Injection Select Input to Common I/O (Figure 14)
pC
THD VCT
Total Harmonic Distortion THD + Noise (Figure 13) Channel-to-Channel Crosstalk
% 5.5 5.5 3.0 0.1 dB *90 *90
http://onsemi.com
4
NLAS325
DUT VCC 0.1 mF 300 W Output VOUT 35 pF Input
VCC GND tBMM 90% Output 90% of VOH
Switch Select Pin GND
Figure 3. tBBM (Time Break-Before-Make)
VCC DUT VCC 0.1 mF Open Output VOUT 300 W 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50%
Figure 4. tON/tOFF
VCC DUT Output Open 300 W VOUT 35 pF Input
VCC 50% 0V VOH Output VOL 10% tOFF tON 10% 50%
Input
Figure 5. tON/tOFF
http://onsemi.com
5
NLAS325
50 W Reference Input Output 50 W Generator 50 W DUT Transmitted
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz for VIN at 100 kHz to 50 MHz
VOUT VIN
Bandwidth (BW) = the frequency 3.0 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W
Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL
DUT Open Output VIN
VCC GND CL Output Off Off DVOUT
VIN
On
Figure 7. Charge Injection: (Q)
100
10 LEAKAGE (nA)
1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF)
0.001 -55
-20
25
70
85
125
TEMPERATURE (C)
Figure 8. Switch Leakage vs. Temperature
http://onsemi.com
6
NLAS325
0 0 1.0 -20 2.0 3.0 (dB) -40 (dB) 4.0 Off Isolation 5.0 6.0 7.0 -80 VCC = 5.0 V TA = 25C 8.0 9.0 100 200 10.0 0.01 VCC = 5.0 V TA = 25C 0.1 1 10 PHASE SHIFT Bandwidth (ON-RESPONSE) +15 +10 +5 0 -5 -10 -15 -20 -25 -30 -35 100 300 PHASE () 5
-60
-100 0.01
0.1
1 10 FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 9. Off-Channel Isolation
Figure 10. Typical Bandwidth and Phase Shift
30 25 20 15 10 5 0 2.5 tOFF (ns) tON (ns) TIME (ns)
30 VCC = 4.5 V 25 20 15 10 5 0 -55 tON tOFF
TIME (ns)
3
3.5
4
4.5
5
-40
25 Temperature (C)
85
125
VCC (VOLTS)
Figure 11. tON and tOFF vs. VCC at 255C
Figure 12. tON and tOFF vs. Temp
1 VINpp = 3.0 V VCC = 3.6 V THD + NOISE (%)
3.0 2.5 2.0 Q (pC) 1.5 1.0 0.5 0 VCC = 3 V VCC = 5 V
0.1 VINpp = 5.0 V VCC = 5.5 V
0.01 1 10 FREQUENCY (kHz) 100
-0.5 0 1 2 VCOM (V) 3 4
Figure 13. Total Harmonic Distortion Plus Noise vs. Frequency
Figure 14. Charge Injection vs. COM Voltage
http://onsemi.com
7
NLAS325
100 10 1 ICC (nA) 0.1 0.01 0.001 0.0001 0.00001 -40 VCC = 3.0 V 20 VCC = 5.0 V -20 0 20 60 80 100 120 0 0.0 1.0 VCC = 5.5 V 2.0 3.0 VIS (VDC) 4.0 5.0 6.0 RON (W) 60 VCC = 2.5 V 40 VCC = 3.0 V VCC = 4.0 V 100 VCC = 2.0 V 80
Temperature (C)
Figure 15. ICC vs. Temp, VCC = 3.0 V and 5.0 V
Figure 16. RON vs. VCC, Temp = 255C
100 90 80 70 RON (W) RON (W) 125C 25C -55C 85C 0.5 1.0 1.5 2.0 2.5 60 50 40 30 20 10 0 0.0
100 90 80 70 60 50 40 30 20 10 0 0.0 125C 0.5 -55C 85C 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 25C
VIS (VDC)
Figure 17. RON vs Temp, VCC = 2.0 V
Figure 18. RON vs. Temp, VCC = 2.5 V
50 45 40 35 RON (W) RON (W) 30 25 20 15 10 5 0 0.0 -55C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 125C 85C 25C
30 25 20 15 10 5 0 0.0 -55C 85C 125C
25C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VIS (VDC)
VIS (VDC)
Figure 19. RON vs. Temp, VCC = 3.0 V
Figure 20. RON vs. Temp, VCC = 4.5 V
http://onsemi.com
8
NLAS325
25 125C 25
20
20 125C
RON (W)
25C 10 85C 5 -55C
RON (W)
15
15 25C 10 85C 5 -55C
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIS (VDC)
VIS (VDC)
Figure 21. RON vs. Temp, VCC = 5.0 V
Figure 22. RON vs. Temp, VCC = 5.5 V
ORDERING INFORMATION
Device Nomenclature Device Order Number NLAS325US NLAS325USG Circuit Indicator NL NL Technology AS AS Device Function 325 325 Package Suffix US USG Package Type US8 US8 (Pb-Free) Tape and Reel Size 178 mm (7) 3000 Unit 178 mm (7) 3000 Unit
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
http://onsemi.com
9
NLAS325
PACKAGE DIMENSIONS
US8 US SUFFIX CASE 493-02 ISSUE B
J
-X- A
8 5
-Y-
DETAIL E B L
1
4
R S U C
P
G
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION "A" DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055") PER SIDE. 4. DIMENSION "B" DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSION. INTER-LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055") PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076-0.0203 MM. (300-800 "). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED 0.0508 (0.0002 "). DIM A B C D F G H J K L M N P R S U V MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC
-T-
SEATING PLANE
D 0.10 (0.004)
K
M
0.10 (0.004) T N TXY V
H
R 0.10 TYP
M
F DETAIL E
SOLDERING FOOTPRINT*
3.8 0.15 0.50 0.0197 1.8 0.07 0.30 0.012 1.0 0.0394
SCALE 8:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
10
NLAS325/D

▲Up To Search▲

Price & Availability of NLAS32506

	To Download NLAS32506 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .